skim429gd17e4hd ? by semikron rev. 6 ? 14.07.2011 1 skim ? 93 gd trench igbt modules skim429gd17e4hd features ? igbt 4 trench gate technology ? solderless sinter technology ? low inductance case ? isolated by al 2 o 3 dcb (direct copper bonded) ceramic substrate ? pressure contact technology for thermal contacts and electrical contacts ? high short circuit capability, self limiting to 6 x i c ? integrated temperature sensor typical applications* ? automotive inverter ? high reliability ac inverter wind ? high reliability ac inverter drives absolute maximum ratings symbol conditions values unit igbt v ces 1700 v i c t j = 175 c t s =25c 595 a t s =70c 479 a i cnom 420 a i crm i crm = 3xi cnom 1260 a v ges -20 ... 20 v t psc v cc = 1200 v v ge 15 v v ces 1700 v t j =150c 10 s t j -40 ... 175 c inverse diode i f t j = 150 c t s =25c 413 a t s =70c 298 a i fnom 420 a i frm i frm = 2xi fnom 840 a i fsm t p = 10 ms, sin 180, t j =25c 3699 a t j -40 ... 150 c module i t(rms) t terminal =80c 700 a t stg -40 ... 125 c v isol ac sinus 50 hz, t = 1 min 3300 v characteristics symbol conditions min. typ. max. unit igbt v ce(sat) i c =420a v ge =15v chiplevel t j =25c 1.90 2.25 v t j =125c 2.1 2.3 v v ce0 t j =25c 1.1 1.2 v t j =125c 11.1v r ce v ge =15v t j =25c 1.9 2.5 m ? t j =125c 2.6 2.9 m ? v ge(th) v ge =v ce , i c = 16.8 ma 5.2 5.8 6.4 v i ces v ge =0v v ce = 1700 v t j =25c 0.15 0.45 ma ma c ies v ce =25v v ge =0v f=1mhz 33.00 nf c oes f=1mhz 1.38 nf c res f=1mhz 1.08 nf q g v ge = - 8 v...+ 15 v 6660 nc r gint t j =25c 2.7 ? t d(on) v cc = 1200 v i c =420a r g on =3.6 ? r g off =3.6 ? di/dt on = 5200 a/s di/dt off =2200a/s t j =125c 390 ns t r t j =125c 80 ns e on t j =125c 245 mj t d(off) t j =125c 1005 ns t f t j =125c 170 ns e off t j =125c 180 mj r th(j-s) per igbt 0.079 k/w
skim429gd17e4hd 2 rev. 6 ? 14.07.2011 ? by semikron characteristics symbol conditions min. typ. max. unit inverse diode v f = v ec i f = 420 a v ge =0v chip t j =25c 1.7 1.9 v t j =125c 1.6 1.8 v v f0 t j =25c 0.9 1.1 1.3 v t j =125c 0.7 0.9 1.1 v r f t j =25c 1.3 1.3 1.3 m ? t j =125c 1.8 1.8 1.8 m ? i rrm i f = 420 a di/dt off =5990a/s v ge =-15v v cc = 1200 v t j =125c 500 a q rr t j =125c 140 c e rr t j =125c 99 mj r th(j-s) per diode 0.169 k/w module l ce 10 15 nh r cc'+ee' terminal-chip t s =25c 0.3 m ? t s =125c 0.5 m ? w 1042 g temperature sensor r 100 t sensor = 100 c (r 25 = 5 k ? )339 ? b 100/125 r (t) = r 100 exp[b 100/125 (1/t-1/373)]; t[k]; 4096 k skim ? 93 gd trench igbt modules skim429gd17e4hd features ? igbt 4 trench gate technology ? solderless sinter technology ? low inductance case ? isolated by al 2 o 3 dcb (direct copper bonded) ceramic substrate ? pressure contact technology for thermal contacts and electrical contacts ? high short circuit capability, self limiting to 6 x i c ? integrated temperature sensor typical applications* ? automotive inverter ? high reliability ac inverter wind ? high reliability ac inverter drives
skim429gd17e4hd ? by semikron rev. 6 ? 14.07.2011 3 fig. 1: typ. output characteristic, inclusive r cc'+ ee' fig. 2: rated current vs. temperature i c = f (t c ) fig. 3: typ. turn-on /-off energy = f (i c ) fig. 4: typ. turn-on /-off energy = f (r g ) fig. 5: typ. transfer characteristic fig. 6: typ. gate charge characteristic
skim429gd17e4hd 4 rev. 6 ? 14.07.2011 ? by semikron fig. 7: typ. switching times vs. i c fig. 8: typ. switching ti mes vs. gate resistor r g fig. 9: typ. transient thermal impedance fig. 10: typ. cal diode forward charact., incl. r cc'+ee' fig. 11: typ. cal diode peak reverse recovery current fig. 12: typ. cal diode recovery charge
skim429gd17e4hd ? by semikron rev. 6 ? 14.07.2011 5 this is an electrostatic discharge sensitive device (esds), international standard iec 60747-1, chapter ix * the specifications of our components may no t be considered as an assurance of component characteristics. components have to b e tested for the respective application. adjustments may be necessary. the use of semikron produc ts in life support appliances and syste ms is subject to prior specification and written approval by semikron. we therefore strongly recommend prior consultation of our staf f. skim 93 gd
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